SQM120P06-07L_GE3

SQM120P06-07L_GE3
Quantity available
31
Shipping available
ready to ship
Location
AT
Brand
Vishay
Mpn
SQM120P06-07L_GE3
Datasheet
Description
P-Channel 60-V (D-S) 175C Mosfet

Technical specification: SQM120P06-07L_GE3

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Affected
RoHS
Compliant
Height
5.08 mm
Case/Package
TO-263
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Weight
1.946308 g
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2010-09-09
Lifecycle Status
Production (Last Updated: 8 months ago)
Continuous Drain Current (ID)
120 A
Drain to Source Breakdown Voltage
-60 V
Drain to Source Resistance
6.7 mΩ
Drain to Source Voltage (Vdss)
-60 V
Element Configuration
Single
Fall Time
32 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
14.28 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
375 W
Min Breakdown Voltage
60 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
375 W
Rds On Max
6.7 mΩ
Rise Time
23 ns
Threshold Voltage
-2 V
Turn-Off Delay Time
97 ns
Turn-On Delay Time
15 ns
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