FDS8880
Quantity available
115
Shipping available
ready to ship
Location
AT
Brand
Fairchild Semiconductor
Mpn
FDS8880
Datasheet
Description
Transistor, Single, N-channel, PowerTrench MOSFET, 30V, 11.6A, SOIC8 | ON Semiconductor FDS8880
Technical specification: FDS8880
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.75 mm
Length
5 mm
Width
4 mm
Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Number of Terminals
8
Weight
130 mg
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Number of Elements
1
Continuous Drain Current (ID)
11.6 A
Current Rating
11.6 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
10 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.235 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Nominal Vgs
2.5 V
Number of Channels
1
Power Dissipation
2.5 W
Rds On Max
10 mΩ
Resistance
10 MΩ
Rise Time
27 ns
Termination
SMD/SMT
Threshold Voltage
2.5 V
Turn-Off Delay Time
38 ns
Turn-On Delay Time
7 ns
Voltage Rating (DC)
30 V
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