FDP047AN08A0
Quantity available
98
Shipping available
ready to ship
Location
AT
Brand
Fairchild Semiconductor
Mpn
FDP047AN08A0
Datasheet
Description
TO-220AB, Single, N-ch, 75V, 4.7MOHM Ultrafet Trench Mosfet
Technical specification: FDP047AN08A0
Radiation Hardening
No
Lead Free
Lead Free
China RoHS
Non-Compliant
REACH SVHC
No
RoHS
Compliant
Width
4.83 mm
Height
20.4 mm
Length
10.67 mm
Mount
Through Hole
Number of Terminals
3
Case/Package
TO-220AB
Contact Plating
Tin
Weight
1.8 g
Number of Pins
3
Manufacturer Lifecycle Status
ACTIVE, NOT REC (Last Updated: 4 years ago)
Lifecycle Status
NRND (Last Updated: 4 years ago)
Fall Time
45 ns
Gate to Source Voltage (Vgs)
20 V
Max Power Dissipation
310 W
Power Dissipation
310 W
Rds On Max
4.7 mΩ
Rise Time
88 ns
Input Capacitance
6.6 nF
Max Junction Temperature (Tj)
175 °C
Number of Channels
1
Resistance
4.7 MΩ
Voltage Rating (DC)
75 V
Continuous Drain Current (ID)
80 A
Current Rating
80 A
Drain to Source Breakdown Voltage
75 V
Drain to Source Resistance
4.7 mΩ
Element Configuration
Single
Min Breakdown Voltage
75 V
Min Operating Temperature
-55 °C
Turn-Off Delay Time
40 ns
Turn-On Delay Time
18 ns
Max Operating Temperature
175 °C
Number of Elements
1
Drain to Source Voltage (Vdss)
75 V
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