FDS8880
Quantity available
115
Shipping available
ready to ship
Location
Austria
Brand
Fairchild Semiconductor
Mpn
FDS8880
Datasheet
Description
Transistor, Single, N-channel, PowerTrench MOSFET, 30V, 11.6A, SOIC8 | ON Semiconductor FDS8880
Technical specification: FDS8880
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Radiation Hardening
No
Fall Time
15 ns
Rise Time
27 ns
Rds On Max
10 mΩ
Resistance
10 MΩ
Nominal Vgs
2.5 V
Termination
SMD/SMT
Current Rating
11.6 A
Input Capacitance
1.235 nF
Power Dissipation
2.5 W
Threshold Voltage
2.5 V
Number of Channels
1
Number of Elements
1
Turn-On Delay Time
7 ns
Dual Supply Voltage
30 V
Turn-Off Delay Time
38 ns
Voltage Rating (DC)
30 V
Element Configuration
Single
Max Power Dissipation
2.5 W
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
7.9 mΩ
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
11.6 A
Max Junction Temperature (Tj)
150 °C
Drain to Source Voltage (Vdss)
30 V
Drain to Source Breakdown Voltage
30 V
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