FDP047AN08A0
Quantity available
98
Shipping available
ready to ship
Location
Austria
Brand
Fairchild Semiconductor
Mpn
FDP047AN08A0
Datasheet
Description
TO-220AB, Single, N-ch, 75V, 4.7MOHM Ultrafet Trench Mosfet
Technical specification: FDP047AN08A0
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Radiation Hardening
No
Fall Time
45 ns
Rise Time
88 ns
Rds On Max
4.7 mΩ
Resistance
4.7 MΩ
Current Rating
80 A
Input Capacitance
6.6 nF
Power Dissipation
310 W
Number of Channels
1
Number of Elements
1
Turn-On Delay Time
18 ns
Turn-Off Delay Time
40 ns
Voltage Rating (DC)
75 V
Element Configuration
Single
Max Power Dissipation
310 W
Max Operating Temperature
175 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
4 mΩ
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
15 A
Max Junction Temperature (Tj)
175 °C
Drain to Source Voltage (Vdss)
75 V
Drain to Source Breakdown Voltage
75 V
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