FDS6690A
Quantity available
33
Shipping available
ready to ship
Location
AT
Brand
onsemi
Mpn
FDS6690A
Datasheet
Description
N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ
Technical specification: FDS6690A
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.5 mm
Length
5 mm
Width
4 mm
Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Number of Terminals
8
Weight
130 mg
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Max Power Dissipation
2.5 W
Continuous Drain Current (ID)
11 A
Current Rating
11 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
12.5 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.205 nF
Max Operating Temperature
150 °C
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1 W
Rds On Max
12.5 mΩ
Resistance
12.5 MΩ
Rise Time
5 ns
Threshold Voltage
1.9 V
Turn-Off Delay Time
28 ns
Turn-On Delay Time
9 ns
Voltage Rating (DC)
30 V
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