FDS6690A
Quantity available
33
Shipping available
immediatly
Location
Austria
Brand
onsemi
Mpn
FDS6690A
Description
N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ
Datasheet
Technical specification: FDS6690A
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Radiation Hardening
No
Fall Time
9 ns
Packaging
Cut Tape
Rise Time
5 ns
Rds On Max
12.5 mΩ
Resistance
12.5 MΩ
Current Rating
11 A
Input Capacitance
1.205 nF
Power Dissipation
2.5 W
Threshold Voltage
1.9 V
Number of Elements
1
Turn-On Delay Time
9 ns
Dual Supply Voltage
30 V
Turn-Off Delay Time
28 ns
Voltage Rating (DC)
30 V
Element Configuration
Single
Max Power Dissipation
2.5 W
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
12.5 mΩ
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
11 A
Drain to Source Voltage (Vdss)
30 V
Drain to Source Breakdown Voltage
30 V
Other components by onsemi
Our web-platform supports OEM and EMS companies in selling their excess stock globally, while offering best prices and quality to prospective buyers.
AT/USDMarketplace
Marketplace
Support
Support
Sustainability
Sustainability
AT/USD