C3M0160120J
Quantity available
197
Shipping available
ready to ship
Location
AT
Brand
Wolfspeed, Inc.
Mpn
C3M0160120J
Description
Silicon Carbide Power MOSFET C3MTM MOSFET
Technical specification: C3M0160120J
China RoHS
Non-Compliant
REACH SVHC
No
RoHS
Compliant
Height
4.82 mm
Case/Package
TO-263-7
Number of Terminals
7
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
PRODUCTION (Last Updated: 4 years ago)
Continuous Drain Current (ID)
17 A
Current Rating
17 A
Drain to Source Breakdown Voltage
1.2 kV
Drain to Source Resistance
208 mΩ
Drain to Source Voltage (Vdss)
1.2 kV
Gate to Source Voltage (Vgs)
19 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
90 W
Min Breakdown Voltage
1.2 kV
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
90 W
Turn-Off Delay Time
14 ns
Turn-On Delay Time
11 ns
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