SI7106DN-T1-E3
Quantity available
100
Shipping available
ready to ship
Location
US
Brand
Vishay Siliconix
Mpn
SI7106DN-T1-E3
Description
MOSFET N-CH 20V 12.5A PPAK1212-8
Technical specification: SI7106DN-T1-E3
Lead Free
Lead Free
REACH SVHC
No
RoHS
Compliant
Radiation Hardening
No
Length
3.3 mm
Height
1.04 mm
Width
3.3 mm
Number of Pins
8
Number of Terminals
5
Mount
Surface Mount
Lifecycle Status
Production (Last Updated: 4 months ago)
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
6.2 mΩ
Drain to Source Voltage (Vdss)
20 V
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Resistance
6.2 mΩ
Continuous Drain Current (ID)
12.5 A
Gate to Source Voltage (Vgs)
12 V
Max Operating Temperature
150 °C
Max Power Dissipation
3.8 W
Number of Channels
1
Number of Elements
1
Power Dissipation
1.5 W
Turn-Off Delay Time
50 ns
Rds On Max
6.2 mΩ
Rise Time
15 ns
Turn-On Delay Time
25 ns
Element Configuration
Single
Fall Time
15 ns
Threshold Voltage
1.5 V
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