MMBT2222ALT1G
Quantity available
137 169
Shipping available
ready to ship
Location
AT
Brand
onsemi
Mpn
MMBT2222ALT1G
Datasheet
Description
Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Technical specification: MMBT2222ALT1G
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
China RoHS
Compliant
Lead Free
Lead Free
Width
1.3 mm
Height
1.11 mm
Length
2.9 mm
Case/Package
SOT-23
Number of Pins
3
Number of Terminals
3
Contact Plating
Tin
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
225 mW
Transition Frequency
300 MHz
Type
General Purpose
Voltage Rating (DC)
40 V
Collector Base Voltage (VCBO)
75 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
40 V
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
75
Max Breakdown Voltage
40 V
Max Collector Current
600 mA
Max Frequency
300 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
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