SI4090DY-T1-GE3
Quantity available
22 500
Shipping available
ready to ship
Location
AT
Brand
Vishay Siliconix
Mpn
SI4090DY-T1-GE3
Description
MOSFET N-CH 100V 19.7A 8SO
Technical specification: SI4090DY-T1-GE3
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.5 mm
Length
5 mm
Width
4 mm
Case/Package
SO
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Number of Terminals
8
Weight
506.605978 mg
Lifecycle Status
NRND (Last Updated: 2 months ago)
Continuous Drain Current (ID)
19.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
10 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.41 nF
Max Operating Temperature
150 °C
Max Power Dissipation
7.8 W
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Digi-Reel®
Power Dissipation
3.5 W
Rds On Max
10 mΩ
Resistance
10 MΩ
Threshold Voltage
2 V
Turn-Off Delay Time
36 ns
Turn-On Delay Time
16 ns
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