PSMN009-100P
Quantity available
47
Shipping available
ready to ship
Location
Austria
Brand
NXP Semiconductors
Mpn
PSMN009-100P
Datasheet
Description
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220AB Tube
Technical specification: PSMN009-100P
RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
Fall Time
43 ns
Rise Time
59 ns
Rds On Max
8.8 mΩ
Input Capacitance
8.25 nF
Power Dissipation
230 W
Turn-On Delay Time
38 ns
Turn-Off Delay Time
120 ns
Element Configuration
Single
Max Power Dissipation
230 W
Max Dual Supply Voltage
100 V
Max Operating Temperature
175 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
8.8 mΩ
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
75 A
Drain to Source Voltage (Vdss)
100 V
Drain to Source Breakdown Voltage
100 V
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