MDD3N50GRH
Quantity available
3 000
Shipping available
ready to ship
Location
AT
Brand
Magna Chip Semiconductor
Mpn
MDD3N50GRH
Description
N-Channel MOSFET 500V, 2.8 A, 2.5 OHM Power Field-Effect Transistor
Technical specification: MDD3N50GRH
RoHS
Non-Compliant
Input Capacitance
285 pF
Turn-On Delay Time
19 ns
Turn-Off Delay Time
33 ns
Element Configuration
Single
Max Power Dissipation
45 W
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
2.5 Ω
Gate to Source Voltage (Vgs)
30 V
Continuous Drain Current (ID)
2.8 A
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