IRFS4227PBF
Quantity available
45
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
IRFS4227PBF
Datasheet
Description
Transistor MOSFET Negative Channel 200 Volt 62A 3-Pin(2+Tab) D2PAK
Technical specification: IRFS4227PBF
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Lead Free
Lead Free
Width
9.65 mm
Height
5.084 mm
Length
10.67 mm
Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Lifecycle Status
Obsolete (Last Updated: 4 months ago)
Min Operating Temperature
-40 °C
Nominal Vgs
5 V
Number of Channels
1
Number of Elements
1
On-State Resistance
26 mΩ
Package Quantity
1000
Power Dissipation
330 W
Rds On Max
26 mΩ
Recovery Time
150 ns
Rise Time
20 ns
Termination
SMD/SMT
Threshold Voltage
5 V
Turn-Off Delay Time
21 ns
Turn-On Delay Time
33 ns
Continuous Drain Current (ID)
62 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
26 mΩ
Drain to Source Voltage (Vdss)
200 V
Dual Supply Voltage
240 V
Element Configuration
Single
Fall Time
31 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
4.6 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
150 °C
Max Power Dissipation
330 W
Min Breakdown Voltage
200 V
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