IRF1010ZSTRLPBF
Quantity available
49
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
IRF1010ZSTRLPBF
Datasheet
Description
Single N-Channel 55 V 7.5 mOhm 95 nC HEXFET® Power Mosfet - D2PAK
Technical specification: IRF1010ZSTRLPBF
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
5.084 mm
Length
10.668 mm
Width
9.65 mm
Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Lifecycle Status
Obsolete (Last Updated: 3 weeks ago)
Continuous Drain Current (ID)
75 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
7.5 mΩ
Drain to Source Voltage (Vdss)
55 V
Fall Time
92 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.84 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
150 °C
Max Power Dissipation
140 W
Min Breakdown Voltage
55 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
7.5 mΩ
Package Quantity
800
Power Dissipation
140 W
Rds On Max
7.5 mΩ
Rise Time
150 ns
Turn-Off Delay Time
36 ns
Turn-On Delay Time
18 ns
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