BSP123 L6327
Quantity available
22
Shipping available
ready to ship
Location
Austria
Brand
Infineon
Mpn
BSP123 L6327
Datasheet
Description
MOSFET, N-CH, 100V, 370MA, SOT223; Transistor Polarity: N Channel; Continuous Dra
Technical specification: BSP123 L6327
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Radiation Hardening
No
Fall Time
3.2 ns
Packaging
Cut Tape
Rise Time
3.2 ns
Rds On Max
6 Ω
Nominal Vgs
1.4 V
Current Rating
370 mA
Input Capacitance
70 pF
Power Dissipation
1.79 W
Number of Elements
1
Turn-On Delay Time
3.3 ns
Turn-Off Delay Time
8.7 ns
Voltage Rating (DC)
100 V
Max Power Dissipation
1.79 W
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
6 Ω
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
370 mA
Drain to Source Voltage (Vdss)
100 V
Drain to Source Breakdown Voltage
100 V
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