BSP123 L6327
Quantity available
22
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
BSP123 L6327
Datasheet
Description
MOSFET, N-CH, 100V, 370MA, SOT223; Transistor Polarity: N Channel; Continuous Dra
Technical specification: BSP123 L6327
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Case/Package
SOT-223-4
Mount
Surface Mount
Number of Pins
4
Number of Terminals
4
Lifecycle Status
Obsolete (Last Updated: 3 months ago)
Continuous Drain Current (ID)
370 mA
Current Rating
370 mA
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
6 Ω
Drain to Source Voltage (Vdss)
100 V
Fall Time
3.2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
70 pF
Max Operating Temperature
150 °C
Max Power Dissipation
1.79 W
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Nominal Vgs
1.4 V
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.79 W
Rds On Max
6 Ω
Rise Time
3.2 ns
Turn-Off Delay Time
8.7 ns
Turn-On Delay Time
3.3 ns
Voltage Rating (DC)
100 V
Other components by Infineon
Our web-platform supports OEM and EMS companies in selling their excess stock globally, while offering best prices and quality to prospective buyers.
AT/USDMarketplace
Marketplace
Support
Support
Sustainability
Sustainability
AT/USD