SBAS21DW5T1G
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onsemi
Mpn
SBAS21DW5T1G
Datenblatt
Beschreibung
HIGH VOLTAGE SWITCHING DIODE Rectifier Diode, 1 Phase, 2 Element, 0.2A, 250V V(RRM), Silicon
Technische Daten: SBAS21DW5T1G
RoHS
Compliant
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
Halogen Free
Halogen Free
Height
1.1 mm
Case/Package
SC
Number of Terminals
5
Number of Pins
5
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Capacitance
5 pF
Average Rectified Current
200 mA
Max Output Current
200 mA
Packaging
Tape and Reel
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
250 V
Element Configuration
Dual
Max Forward Surge Current (Ifsm)
625 mA
Peak Reverse Current
100 µA
Power Dissipation
385 mW
Forward Voltage
1 V
Forward Current
200 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
385 mW
Max Repetitive Reverse Voltage (Vrrm)
250 V
Min Operating Temperature
-55 °C
Recovery Time
50 ns
Reverse Voltage
250 V
Max Reverse Voltage (DC)
250 V
Max Surge Current
625 mA
Number of Elements
2
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