QRE1113GR
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23 441
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onsemi
Mpn
QRE1113GR
Datenblatt
Beschreibung
QRE1113 Series 30 V 50 mA Miniature Reflective Object Sensor - SMD-4
Technische Daten: QRE1113GR
Lead Free
Lead Free
China RoHS
Compliant
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Width
2.9 mm
Length
3.4 mm
Height
1.6 mm
Mount
Surface Mount
Number of Pins
4
Contact Plating
Tin
Weight
78 mg
Case/Package
SMD/SMT
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Max Breakdown Voltage
30 V
Max Output Voltage
30 V
Response Time
20 µs
Reverse Breakdown Voltage
5 V
Forward Voltage
1.2 V
Max Collector Current
900 µA
Number of Elements
1
Operating Supply Voltage
1.7 V
Output Type
Phototransistor
Collector Emitter Breakdown Voltage
30 V
Dark Current
1 nA
Max Operating Temperature
85 °C
Max Power Dissipation
75 mW
Min Operating Temperature
-40 °C
Min Supply Voltage
1.2 V
Number of Channels
1
Output Voltage
20 V
Reverse Voltage (DC)
5 V
Rise Time
20 µs
Sensing Distance
1 mm
Wavelength
940 nm
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
30 V
Current Rating
20 mA
Fall Time
20 µs
Forward Current
50 mA
Input Current
50 mA
Max Supply Voltage
1.6 V
Number of Circuits
1
Packaging
Cut Tape
Power Dissipation
75 mW
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