NCV1413BDR2G
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NCV1413BDR2G
Datenblatt
Beschreibung
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC
Technische Daten: NCV1413BDR2G
China RoHS
Compliant
Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
Ratings
AEC-Q100
REACH SVHC
Unaffected
RoHS
Compliant
Height
1.75 mm
Height - Seated (Max)
1.75 mm
Length
9.9 mm
Terminal Pitch
1.27 mm
Width
3.9 mm
Case/Package
SOP
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
16
Number of Terminals
16
Weight
665.986997 mg
Country of Origin
Philippines
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8542.39.00.60
Introduction Date
1999-01-01
Lifecycle Status
Production (Last Updated: 5 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 5 years ago)
Ambient Temperature Range High
125 °C
Collector Emitter Saturation Voltage
1.1 V
Collector Emitter Voltage (VCEO)
50 V
Current Rating
500 mA
hFE Min
1000
Max Collector Current
500 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
125 °C
Max Output Current
500 mA
Max Supply Current
1.35 mA
Min Operating Temperature
-40 °C
Number of Channels
7
Number of Circuits
1
Number of Elements
7
Number of Transmitters
7
Output Current
50 µA
Output Voltage
50 V
Polarity
NPN
Voltage Rating (DC)
50 V
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