MMBT2907ALT1G
Verfügbare Menge
24 000
Versand möglich
fertig zum Versand
Standort
AT
Marke
onsemi
Mpn
MMBT2907ALT1G
Datenblatt
Beschreibung
Transistor, Bipolar; Si; PNP; General Purpose; VCEO -60VDC; IC -600mA; PD 225mW; hFE 50
Technische Daten: MMBT2907ALT1G
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
Yes
Radiation Hardening
No
China RoHS
Compliant
Height
1.11 mm
Length
2.9 mm
Width
1.3 mm
Number of Pins
3
Contact Plating
Tin
Number of Terminals
3
Case/Package
SOT-23
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Collector Emitter Voltage (VCEO)
60 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Max Breakdown Voltage
60 V
Max Power Dissipation
225 mW
Power Dissipation
225 mW
Transition Frequency
200 MHz
Gain Bandwidth Product
200 MHz
hFE Min
100
Min Operating Temperature
-55 °C
Number of Elements
1
Collector Base Voltage (VCBO)
-60 V
Current Rating
-600 mA
Frequency
200 MHz
Max Collector Current
600 mA
Max Operating Temperature
150 °C
Packaging
Tape and Reel
Type
General Purpose
Max Frequency
200 MHz
Max Junction Temperature (Tj)
150 °C
Polarity
PNP
Voltage Rating (DC)
-60 V
Collector Emitter Breakdown Voltage
-60 V
Collector Emitter Saturation Voltage
-400 mV
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