FQD2N100TM
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Standort
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Marke
onsemi
Mpn
FQD2N100TM
Datenblatt
Beschreibung
N CHANNEL MOSFET, 1KV, 1.6mA
Technische Daten: FQD2N100TM
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
2.517 mm
Length
6.6 mm
Width
6.1 mm
Case/Package
DPAK
Contact Plating
Tin
Number of Pins
3
Number of Terminals
2
Weight
260.37 mg
Mount
Surface Mount
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Continuous Drain Current (ID)
1.6 A
Current Rating
1.6 A
Drain to Source Breakdown Voltage
1 kV
Drain to Source Resistance
9 Ω
Drain to Source Voltage (Vdss)
1 kV
Element Configuration
Single
Fall Time
35 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
520 pF
Nominal Vgs
5 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.5 W
Rds On Max
9 Ω
Resistance
9 Ω
Rise Time
30 ns
Threshold Voltage
5 V
Turn-Off Delay Time
25 ns
Turn-On Delay Time
13 ns
Voltage Rating (DC)
900 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
50 W
Min Breakdown Voltage
1 kV
Min Operating Temperature
-55 °C
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