FDS6982AS
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FDS6982AS
Beschreibung
MOSFET 2N-CH 30V 6.3A
Technische Daten: FDS6982AS
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.75 mm
Length
5 mm
Width
3.99 mm
Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Number of Terminals
8
Weight
187 mg
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.29.00.95
Introduction Date
2005-01-11
Lifecycle Status
EOL (Last Updated: 1 week ago)
LTB Date
2022-03-31
LTD Date
2023-03-31
Manufacturer Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Continuous Drain Current (ID)
8.6 A
Current Rating
8.6 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
13.5 mΩ
Drain to Source Voltage (Vdss)
30 V
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
610 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Nominal Vgs
1.4 V
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
2 W
Rds On Max
28 mΩ
Recovery Time
19 ns
Resistance
28 MΩ
Rise Time
7 ns
Threshold Voltage
1.9 V
Turn-Off Delay Time
24 ns
Turn-On Delay Time
12 ns
Voltage Rating (DC)
30 V
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