FDN338P
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Standort
AT
Marke
onsemi
Mpn
FDN338P
Datenblatt
Beschreibung
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.6A, 115mΩ
Technische Daten: FDN338P
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.22 mm
Width
3.05 mm
Case/Package
TO-236-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
30 mg
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Continuous Drain Current (ID)
1.6 A
Current Rating
-1.6 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
115 mΩ
Drain to Source Voltage (Vdss)
-20 V
Element Configuration
Single
Fall Time
11 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
451 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Nominal Vgs
-800 mV
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
115 mΩ
Resistance
115 mΩ
Rise Time
11 ns
Threshold Voltage
-800 mV
Turn-Off Delay Time
16 ns
Turn-On Delay Time
10 ns
Voltage Rating (DC)
-20 V
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