BSS138LT1G
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onsemi
Mpn
BSS138LT1G
Beschreibung
N-Kanal 50V 200mA (Ta) 225mW (Ta)
Technische Daten: BSS138LT1G
China RoHS
Compliant
Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.11 mm
Length
3.04 mm
Width
1.4 mm
Case/Package
SOT-23-3
Contact Plating
Tin
Number of Pins
3
Number of Terminals
3
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Continuous Drain Current (ID)
200 mA
Current Rating
200 mA
Drain to Source Breakdown Voltage
50 V
Drain to Source Resistance
3.5 Ω
Drain to Source Voltage (Vdss)
50 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
50 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
225 mW
Min Breakdown Voltage
50 V
Min Operating Temperature
-55 °C
Nominal Vgs
1.5 V
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
225 mW
Rds On Max
3.5 Ω
Resistance
3.5 Ω
Threshold Voltage
1.5 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
20 ns
Voltage Rating (DC)
50 V
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