BSS123LT1G
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23 103
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onsemi
Mpn
BSS123LT1G
Beschreibung
Transistor: N-MOSFET; unipolar; 100V; 0.17A; 6ohm;
Technische Daten: BSS123LT1G
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
China RoHS
Compliant
Lead Free
Lead Free
Height
1.01 mm
Length
3.04 mm
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Case/Package
SOT-23
Contact Plating
Tin
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Max Operating Temperature
150 °C
Max Power Dissipation
225 mW
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Nominal Vgs
20 V
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
225 mW
Rds On Max
6 Ω
Resistance
6 Ω
Threshold Voltage
800 mV
Turn-Off Delay Time
40 ns
Turn-On Delay Time
20 ns
Voltage Rating (DC)
100 V
Continuous Drain Current (ID)
170 mA
Current Rating
170 mA
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
6 Ω
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
20 pF
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