2V7002WT1G
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2V7002WT1G
Datenblatt
Beschreibung
MOSFET NFET 60V 115MA 7OHM
Technische Daten: 2V7002WT1G
China RoHS
Compliant
Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
Ratings
AEC-Q101
REACH SVHC
Yes
RoHS
Compliant
Height
1 mm
Length
2.2 mm
Width
1.35 mm
Case/Package
SOT-323
Number of Pins
3
Number of Terminals
3
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2007-04-25
Lifecycle Status
Production (Last Updated: 5 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 5 years ago)
Continuous Drain Current (ID)
310 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
1.6 Ω
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
29 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
24.5 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
330 mW
Min Breakdown Voltage
60 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
280 mW
Rds On Max
1.6 Ω
Rise Time
9 ns
Turn-Off Delay Time
55.8 ns
Turn-On Delay Time
12.2 ns
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