FQS4901TF
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2
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onsemi
Mpn
FQS4901TF
Datenblatt
Beschreibung
Transistor MOSFET Array Dual N-CH 400V 1.8A 8-Pin SOIC T/R
Technische Daten: FQS4901TF
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.75 mm
Case/Package
SOP
Mount
Surface Mount
Number of Pins
8
Number of Terminals
8
Weight
230.4 mg
Lifecycle Status
EOL (Last Updated: 11 months ago)
Manufacturer Lifecycle Status
LAST SHIPMENTS (Last Updated: 11 months ago)
Continuous Drain Current (ID)
450 mA
Current Rating
450 mA
Drain to Source Breakdown Voltage
400 V
Drain to Source Resistance
4.2 Ω
Drain to Source Voltage (Vdss)
400 V
Element Configuration
Dual
Fall Time
35 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
210 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Breakdown Voltage
400 V
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
2 W
Rds On Max
4.2 Ω
Resistance
4.2 Ω
Rise Time
20 ns
Threshold Voltage
4 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
5 ns
Voltage Rating (DC)
400 V
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