BSS84
Verfügbare Menge
22 038
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fertig zum Versand
Standort
AT
Marke
Philips
Mpn
BSS84
Datenblatt
Beschreibung
Transistor: P-MOSFET; unipolar; -50V; -0.13A; 10ohm; 0.25W; -65+150 deg.C; SMD; SOT23
Technische Daten: BSS84
China RoHS
Compliant
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.2 mm
Length
2.92 mm
Width
3.05 mm
Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Continuous Drain Current (ID)
130 mA
Current
13 A
Current Rating
-130 mA
Drain to Source Breakdown Voltage
-50 V
Drain to Source Resistance
10 Ω
Drain to Source Voltage (Vdss)
-50 V
Dual Supply Voltage
-50 V
Element Configuration
Single
Fall Time
6.3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
73 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Breakdown Voltage
50 V
Min Operating Temperature
-55 °C
Nominal Vgs
-1.7 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
360 mW
Rds On Max
10 Ω
Resistance
10 Ω
Rise Time
6.3 ns
Termination
SMD/SMT
Threshold Voltage
-1.7 V
Turn-Off Delay Time
10 ns
Turn-On Delay Time
2.5 ns
Voltage
50 V
Voltage Rating (DC)
-50 V
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