SBC856BLT1G
Quantity available
5 990
Shipping available
ready to ship
Location
AT
Brand
onsemi
Mpn
SBC856BLT1G
Datasheet
Description
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Technical specification: SBC856BLT1G
Lead Free
Lead Free
China RoHS
Compliant
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.11 mm
Length
3.04 mm
Width
2.64 mm
Case/Package
SOT-23-3
Contact Plating
Tin
Number of Pins
3
Number of Terminals
3
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
hFE Min
220
Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
-650 mV
Collector Emitter Voltage (VCEO)
65 V
Continuous Collector Current
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Max Breakdown Voltage
65 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300 mW
Transition Frequency
100 MHz
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