SBC846BLT3G

SBC846BLT3G
Quantity available
9 713
Shipping available
ready to ship
Location
AT
Brand
onsemi
Mpn
SBC846BLT3G
Datasheet
Description
Bipolar (BJT) Transistor NPN 65 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)

Technical specification: SBC846BLT3G

Lead Free
Lead Free
REACH SVHC
Yes
RoHS
Compliant
China RoHS
Compliant
Halogen Free
Halogen Free
Radiation Hardening
No
Height
1.11 mm
Width
2.64 mm
Length
3.04 mm
Number of Terminals
3
Case/Package
SOT-23-3
Number of Pins
3
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
hFE Min
200
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
600 mV
Number of Elements
1
Emitter Base Voltage (VEBO)
6 V
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Packaging
Tape and Reel
Transition Frequency
100 MHz
Collector Base Voltage (VCBO)
80 V
Element Configuration
Single
Frequency
100 MHz
Max Breakdown Voltage
65 V
Polarity
NPN
Collector Emitter Voltage (VCEO)
65 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Power Dissipation
300 mW
Power Dissipation
300 mW
9 713 Available

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