MMBT3906LT1G
Quantity available
43,198
Shipping available
ready to ship
Location
Austria
Brand
onsemi
Mpn
MMBT3906LT1G
Datasheet
Description
Single Bipolar Transistor, PNP, 40 V, 200 mA, 225 mW, SOT-23, 3 Pin, Surface Mount
Technical specification: MMBT3906LT1G
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Radiation Hardening
No
hFE Min
30
Polarity
PNP
Frequency
250 MHz
Packaging
Tape and Reel
Max Frequency
250 MHz
Current Rating
-200 mA
Power Dissipation
300 mW
Number of Elements
1
Voltage Rating (DC)
-40 V
Transition Frequency
250 MHz
Element Configuration
Single
Max Breakdown Voltage
40 V
Max Collector Current
-200 mA
Max Power Dissipation
300 mW
Gain Bandwidth Product
250 MHz
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Emitter Base Voltage (VEBO)
-5 V
Collector Base Voltage (VCBO)
-40 V
Max Junction Temperature (Tj)
150 °C
Collector Emitter Voltage (VCEO)
-40 V
Collector Emitter Breakdown Voltage
-40 V
Collector Emitter Saturation Voltage
-400 mV
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