MMBT2907ALT1G
Quantity available
24 000
Shipping available
ready to ship
Location
AT
Brand
onsemi
Mpn
MMBT2907ALT1G
Datasheet
Description
Transistor, Bipolar; Si; PNP; General Purpose; VCEO -60VDC; IC -600mA; PD 225mW; hFE 50
Technical specification: MMBT2907ALT1G
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.11 mm
Length
2.9 mm
Width
1.3 mm
Case/Package
SOT-23
Contact Plating
Tin
Number of Pins
3
Number of Terminals
3
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Collector Emitter Voltage (VCEO)
60 V
Collector Base Voltage (VCBO)
-60 V
Collector Emitter Breakdown Voltage
-60 V
Collector Emitter Saturation Voltage
-400 mV
Current Rating
-600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
hFE Min
100
Max Breakdown Voltage
60 V
Max Collector Current
600 mA
Max Frequency
200 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
225 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
225 mW
Transition Frequency
200 MHz
Type
General Purpose
Voltage Rating (DC)
-60 V
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