MMBT2907ALT1G
Quantity available
18 000
Shipping available
ready to ship
Location
Austria
Brand
onsemi
Mpn
MMBT2907ALT1G
Datasheet
Description
Transistor, Bipolar; Si; PNP; General Purpose; VCEO -60VDC; IC -600mA; PD 225mW; hFE 50
Technical specification: MMBT2907ALT1G
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Radiation Hardening
No
Type
General Purpose
hFE Min
75
Polarity
PNP
Frequency
200 MHz
Packaging
Tape and Reel
Max Frequency
200 MHz
Current Rating
-600 mA
Power Dissipation
225 mW
Number of Elements
1
Voltage Rating (DC)
-60 V
Transition Frequency
200 MHz
Element Configuration
Single
Max Breakdown Voltage
60 V
Max Collector Current
-600 mA
Max Power Dissipation
300 mW
Gain Bandwidth Product
200 MHz
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Emitter Base Voltage (VEBO)
-5 V
Collector Base Voltage (VCBO)
-60 V
Max Junction Temperature (Tj)
150 °C
Collector Emitter Voltage (VCEO)
-60 V
Collector Emitter Breakdown Voltage
-60 V
Collector Emitter Saturation Voltage
-1.6 V
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