MBT3946DW1T1G
Quantity available
2 445
Shipping available
ready to ship
Location
AT
Brand
onsemi
Mpn
MBT3946DW1T1G
Datasheet
Description
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 40V 200mA 300MHz, 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363
Technical specification: MBT3946DW1T1G
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1 mm
Length
2.2 mm
Width
1.35 mm
Case/Package
SC
Contact Plating
Tin
Number of Pins
6
Number of Terminals
6
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2001-12-09
Lifecycle Status
Production (Last Updated: 5 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 5 years ago)
Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
40 V
Current Rating
200 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
30
Max Breakdown Voltage
40 V
Max Collector Current
200 mA
Max Frequency
300 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Number of Elements
2
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
150 mW
Transition Frequency
300 MHz
Voltage Rating (DC)
40 V
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