FDD3672
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Brand
onsemi
Mpn
FDD3672
Datasheet
Description
N-Channel MOSFET, UltraFET® Trench, 100V, 44A, 28mΩ
Technical specification: FDD3672
RoHS
Compliant
Radiation Hardening
No
Fall Time
44 ns
Rise Time
37 ns
Rds On Max
47 mΩ
Input Capacitance
1.635 nF
Power Dissipation
144 W
Turn-On Delay Time
12 ns
Turn-Off Delay Time
24 ns
Element Configuration
Single
Max Power Dissipation
144 W
Max Operating Temperature
175 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
24 mΩ
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
44 A
Drain to Source Voltage (Vdss)
100 V
Drain to Source Breakdown Voltage
100 V
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