BCP56T1G
Quantity available
10 000
Shipping available
ready to ship
Location
AT
Brand
onsemi
Mpn
BCP56T1G
Description
NPN Bipolar Transistor, 1 A, 80 V SOT-223
Technical specification: BCP56T1G
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.75 mm
Length
6.5 mm
Width
3.5 mm
Case/Package
SOT-223-4
Contact Plating
Tin
Number of Pins
4
Number of Terminals
4
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
80 V
Current Rating
1 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
130 MHz
Gain Bandwidth Product
130 MHz
hFE Min
40
Max Breakdown Voltage
80 V
Max Collector Current
1 A
Max Frequency
130 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.5 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.5 W
Transition Frequency
130 MHz
Voltage Rating (DC)
80 V
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