BC848BLT1
Quantity available
21 000
Shipping available
ready to ship
Location
Austria
Brand
onsemi
Mpn
BC848BLT1
Datasheet
Description
Bipolar (BJT) Transistor NPN 30V 100mA 100MHz
Technical specification: BC848BLT1
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Radiation Hardening
No
Type
General Purpose
hFE Min
200
Polarity
NPN
Frequency
100 MHz
Packaging
Cut Tape
Noise Figure
10 dB
Max Frequency
100 MHz
Current Rating
100 mA
Power Dissipation
300 mW
Number of Elements
1
Voltage Rating (DC)
30 V
Transition Frequency
100 MHz
Element Configuration
Single
Max Breakdown Voltage
30 V
Max Collector Current
100 mA
Max Power Dissipation
300 mW
Gain Bandwidth Product
100 MHz
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Emitter Base Voltage (VEBO)
5 V
Collector Base Voltage (VCBO)
30 V
Collector Emitter Voltage (VCEO)
30 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
600 mV
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