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    SQJ431AEP-T1_GE3

    SQJ431AEP-T1_GE3
    Quantity available
    60
    Shipping available
    ready to ship
    Location
    AT
    Brand
    Vishay
    Mpn
    SQJ431AEP-T1_GE3
    Description
    Trans MOSFET P-CH 200V 9.4A Automotive AEC-Q101

    Technical specification: SQJ431AEP-T1_GE3

    REACH SVHC
    Yes
    RoHS
    Compliant
    Height
    1.267 mm
    Number of Terminals
    4
    Lifecycle Status
    Production (Last Updated: 3 months ago)
    Continuous Drain Current (ID)
    9.4 A
    Drain to Source Breakdown Voltage
    -200 V
    Drain to Source Resistance
    315 mΩ
    Drain to Source Voltage (Vdss)
    -200 V
    Gate to Source Voltage (Vgs)
    20 V
    Max Junction Temperature (Tj)
    175 °C
    Max Operating Temperature
    175 °C
    Min Breakdown Voltage
    200 V
    Min Operating Temperature
    -55 °C
    Number of Channels
    1
    Number of Elements
    1
    Power Dissipation
    68 W
    Turn-Off Delay Time
    35 ns
    Turn-On Delay Time
    16 ns
    60 In-Stock

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