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    SIR668ADP-T1-RE3

    SIR668ADP-T1-RE3
    Quantity available
    26 200
    Shipping available
    ready to ship
    Location
    AT
    Brand
    Vishay
    Mpn
    SIR668ADP-T1-RE3
    Datasheet
    Download
    Description
    Transistor MOSFET N-CH 100V 93.6A 8-Pin PowerPAK SO

    Technical specification: SIR668ADP-T1-RE3

    REACH SVHC
    Affected
    RoHS
    Compliant
    Height
    1.12 mm
    Number of Terminals
    5
    Lifecycle Status
    Production (Last Updated: 7 months ago)
    Continuous Drain Current (ID)
    93.6 A
    Drain to Source Breakdown Voltage
    100 V
    Drain to Source Resistance
    4.8 mΩ
    Drain to Source Voltage (Vdss)
    100 V
    Gate to Source Voltage (Vgs)
    20 V
    Max Junction Temperature (Tj)
    150 °C
    Max Operating Temperature
    150 °C
    Manufacturer Package Identifier
    S17-0173-Single
    Min Breakdown Voltage
    100 V
    Min Operating Temperature
    -55 °C
    Number of Channels
    1
    Number of Elements
    1
    Power Dissipation
    6.25 W
    Turn-Off Delay Time
    36 ns
    Turn-On Delay Time
    21 ns
    26 200 Available

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