SI4900DYT1E3
Quantity available
4 992
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ready to ship
Location
AT
Brand
Vishay
Mpn
SI4900DYT1E3
Datasheet
Description
Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R
Technical specification: SI4900DYT1E3
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.75 mm
Length
5 mm
Width
4 mm
Case/Package
SOIC N
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Number of Terminals
8
Weight
186.993455 mg
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2005-03-07
Lifecycle Status
Obsolete (Last Updated: 6 months ago)
LTB Date
2024-11-30
Continuous Drain Current (ID)
5.3 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
58 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Dual
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
665 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3.1 W
Min Breakdown Voltage
60 V
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
2 W
Rds On Max
58 mΩ
Resistance
58 mΩ
Rise Time
15 ns
Turn-Off Delay Time
20 ns
Turn-On Delay Time
10 ns
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