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    SI4900DYT1E3

    SI4900DYT1E3
    Quantity available
    4 992
    Shipping available
    ready to ship
    Location
    Austria
    Brand
    Vishay
    Mpn
    SI4900DYT1E3
    Datasheet
    Download
    Description
    Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R

    Technical specification: SI4900DYT1E3

    RoHS
    Compliant
    Lead Free
    Lead Free
    Radiation Hardening
    No
    Fall Time
    10 ns
    Rise Time
    15 ns
    Rds On Max
    58 mΩ
    Resistance
    58 mΩ
    Input Capacitance
    665 pF
    Power Dissipation
    2 W
    Number of Channels
    2
    Number of Elements
    2
    Turn-On Delay Time
    10 ns
    Turn-Off Delay Time
    20 ns
    Element Configuration
    Dual
    Max Power Dissipation
    2 W
    Max Operating Temperature
    150 °C
    Min Operating Temperature
    -55 °C
    Drain to Source Resistance
    46 mΩ
    Gate to Source Voltage (Vgs)
    20 V
    Continuous Drain Current (ID)
    4.3 A
    Max Junction Temperature (Tj)
    150 °C
    Drain to Source Voltage (Vdss)
    60 V
    Drain to Source Breakdown Voltage
    60 V
    4 992 In-Stock

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