STB30N65M5
Quantity available
8 164
Shipping available
ready to ship
Location
AT
Brand
STMicroelectronics
Mpn
STB30N65M5
Datasheet
Description
N-channel 650 V, 0.125 Ohm typ., 22 A MDmesh M5 Power MOSFET in D2PAK package
Technical specification: STB30N65M5
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Lifecycle Status
Production (Last Updated: 2 months ago)
Continuous Drain Current (ID)
22 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
139 mΩ
Drain to Source Voltage (Vdss)
650 V
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
2.88 nF
Max Operating Temperature
150 °C
Max Power Dissipation
140 W
Min Breakdown Voltage
650 V
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
140 W
Rds On Max
139 mΩ
Resistance
139 MΩ
Rise Time
8 ns
Turn-Off Delay Time
50 ns
Turn-On Delay Time
50 ns
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