STB12NK80ZT4
Quantity available
19 539
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ready to ship
Location
AT
Brand
STMicroelectronics
Mpn
STB12NK80ZT4
Datasheet
Description
N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D2PAK package
Technical specification: STB12NK80ZT4
China RoHS
Non-Compliant
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
4.6 mm
Length
10.4 mm
Width
9.35 mm
Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Lifecycle Status
Production (Last Updated: 3 weeks ago)
Continuous Drain Current (ID)
10.5 A
Current Rating
10.5 A
Drain to Source Breakdown Voltage
800 V
Drain to Source Resistance
750 mΩ
Drain to Source Voltage (Vdss)
800 V
Dual Supply Voltage
800 V
Element Configuration
Single
Fall Time
20 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
2.62 nF
Max Operating Temperature
150 °C
Max Power Dissipation
190 W
Min Breakdown Voltage
800 V
Min Operating Temperature
-55 °C
Nominal Vgs
3.75 V
Number of Elements
1
Power Dissipation
190 W
Rds On Max
750 mΩ
Resistance
750 mΩ
Rise Time
18 ns
Termination
SMD/SMT
Threshold Voltage
3.75 V
Turn-Off Delay Time
70 ns
Turn-On Delay Time
30 ns
Voltage Rating (DC)
800 V
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