STB11NM80T4
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12 353
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ready to ship
Location
AT
Brand
STMicroelectronics
Mpn
STB11NM80T4
Datasheet
Description
N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in D2PAK
Technical specification: STB11NM80T4
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Radiation Hardening
No
Fall Time
15 ns
Packaging
Cut Tape
Rise Time
17 ns
Rds On Max
400 mΩ
Resistance
400 mΩ
Current Rating
11 A
Input Capacitance
1.63 nF
Power Dissipation
150 W
Threshold Voltage
4 V
Number of Elements
1
Turn-On Delay Time
22 ns
Turn-Off Delay Time
46 ns
Voltage Rating (DC)
800 V
Element Configuration
Single
Max Power Dissipation
150 W
Max Operating Temperature
150 °C
Min Operating Temperature
-65 °C
Drain to Source Resistance
400 mΩ
Gate to Source Voltage (Vgs)
30 V
Continuous Drain Current (ID)
11 A
Drain to Source Voltage (Vdss)
800 V
Drain to Source Breakdown Voltage
800 V
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