STB11NM80T4
Quantity available
12 353
Shipping available
ready to ship
Location
AT
Brand
STMicroelectronics
Mpn
STB11NM80T4
Datasheet
Description
N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in D2PAK
Technical specification: STB11NM80T4
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Affected
RoHS
Compliant
Height
4.6 mm
Length
10.75 mm
Width
10.4 mm
Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
1980-01-04
Lifecycle Status
Production (Last Updated: 3 months ago)
Continuous Drain Current (ID)
11 A
Current Rating
11 A
Drain to Source Breakdown Voltage
800 V
Drain to Source Resistance
400 mΩ
Drain to Source Voltage (Vdss)
800 V
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.63 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 W
Min Breakdown Voltage
800 V
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
150 W
Rds On Max
400 mΩ
Resistance
400 mΩ
Rise Time
17 ns
Threshold Voltage
4 V
Turn-Off Delay Time
46 ns
Turn-On Delay Time
22 ns
Voltage Rating (DC)
800 V
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