IRF7341PBF
Quantity available
2 493
Shipping available
ready to ship
Location
US
Brand
International Rectifier
Mpn
IRF7341PBF
Datasheet
Description
Transistor: 2xN-MOSFET, unipolar, 55V, 4.7A, 0.05ohm, 2W, -55+150 deg.C, SMD, SO8
Technical specification: IRF7341PBF
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.4986 mm
Length
4.9784 mm
Row Spacing
6.3 mm
Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Number of Terminals
8
Lifecycle Status
Obsolete (Last Updated: 4 months ago)
Continuous Drain Current (ID)
4.7 A
Current Rating
4.7 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
50 mΩ
Drain to Source Voltage (Vdss)
55 V
Dual Supply Voltage
55 V
Element Configuration
Dual
Fall Time
13 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
740 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Turn-Off Delay Time
31 ns
Turn-On Delay Time
8.3 ns
Voltage Rating (DC)
55 V
Max Power Dissipation
2 W
Min Breakdown Voltage
55 V
Min Operating Temperature
-55 °C
Nominal Vgs
1 V
Number of Elements
2
On-State Resistance
50 mΩ
Package Quantity
3800
Packaging
Bulk
Power Dissipation
2 W
Rds On Max
50 mΩ
Recovery Time
90 ns
Resistance
50 mΩ
Rise Time
3.2 ns
Threshold Voltage
1 V
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