SMBT2907AE6327HTSA1
Quantity available
9 730
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
SMBT2907AE6327HTSA1
Datasheet
Description
Bipolar junction transistor, PNP, 600 mA, 60 ## Fehler ##, SMD, SOT-23, SMBT2907AE6327
Technical specification: SMBT2907AE6327HTSA1
China RoHS
Compliant
Halogen Free
Not Halogen Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.1 mm
Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Lifecycle Status
EOL (Last Updated: 4 months ago)
Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
1.6 V
Collector Emitter Voltage (VCEO)
60 V
Continuous Collector Current
600 mA
Current Rating
-600 mA
Emitter Base Voltage (VEBO)
5 V
Frequency
200 MHz
hFE Min
50
Max Breakdown Voltage
60 V
Max Collector Current
600 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
330 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
PNP
Power Dissipation
330 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
-60 V
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