IPD80R2K8CEATMA1
Quantity available
2 500
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
IPD80R2K8CEATMA1
Datasheet
Description
MOSFET N-CH 800V 1.9A TO252-3
Technical specification: IPD80R2K8CEATMA1
China RoHS
Non-Compliant
Lead Free
Lead Free
REACH SVHC
No
RoHS
Compliant
Case/Package
TO-252-3
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Weight
3.949996 g
Country of Origin
Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2011-01-20
Lifecycle Status
NRND (Last Updated: 3 months ago)
Continuous Drain Current (ID)
1.9 A
Drain to Source Resistance
2.8 Ω
Drain to Source Voltage (Vdss)
800 V
Element Configuration
Single
Fall Time
18 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
290 pF
Max Dual Supply Voltage
800 V
Max Operating Temperature
150 °C
Max Power Dissipation
42 W
Min Breakdown Voltage
800 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
2.8 Ω
Package Quantity
2500
Packaging
Tape & Reel
Power Dissipation
42 W
Rds On Max
2.8 Ω
Rise Time
15 ns
Turn-Off Delay Time
72 ns
Turn-On Delay Time
25 ns
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