BSB044N08NN3G

BSB044N08NN3G
Quantity available
4 000
Shipping available
ready to ship
Location
Austria
Brand
Infineon
Mpn
BSB044N08NN3G
Datasheet
Description
Single N-Channel 80 V 4.4 mOhm 55 nC OptiMOS™ Power Mosfet - MG-WDSON-2

Technical specification: BSB044N08NN3G

RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Halogen Free
Halogen Free
Packaging
Digi-Reel®
Rise Time
9 ns
Package Quantity
5000
Input Capacitance
4.3 nF
Power Dissipation
78 W
Threshold Voltage
2.8 V
On-State Resistance
4.4 mΩ
Max Power Dissipation
78 W
Max Dual Supply Voltage
80 V
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Drain to Source Resistance
3.7 mΩ
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
18 A
Drain to Source Voltage (Vdss)
80 V
4 000 In-Stock

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