MMBT4401LT1G
Quantity available
18 491
Shipping available
ready to ship
Location
AT
Brand
Fairchild Semiconductor
Mpn
MMBT4401LT1G
Datasheet
Description
Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Technical specification: MMBT4401LT1G
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.11 mm
Length
2.9 mm
Width
1.3 mm
Case/Package
SOT-23
Contact Plating
Tin
Number of Pins
3
Number of Terminals
3
Weight
4.535924 g
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
750 mV
Collector Emitter Voltage (VCEO)
40 V
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
250 MHz
Gain Bandwidth Product
250 MHz
hFE Min
40
Max Breakdown Voltage
40 V
Max Collector Current
600 mA
Max Frequency
250 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
225 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
40 V
Other components by Fairchild Semiconductor
Our web-platform supports OEM and EMS companies in selling their excess stock globally, while offering best prices and quality to prospective buyers.
AT/USDMarketplace
Marketplace
Support
Support
Sustainability
Sustainability
AT/USD