FDC637BNZ
Quantity available
6 000
Shipping available
ready to ship
Location
Austria
Brand
Fairchild Semiconductor
Mpn
FDC637BNZ
Datasheet
Description
Trans MOSFET N-CH 20V 6.2A
Technical specification: FDC637BNZ
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Radiation Hardening
No
Fall Time
6 ns
Rise Time
6 ns
Rds On Max
24 mΩ
Resistance
24 MΩ
Nominal Vgs
800 mV
Input Capacitance
895 pF
Power Dissipation
800 mW
Threshold Voltage
800 mV
Number of Channels
1
Number of Elements
1
Turn-On Delay Time
8 ns
Turn-Off Delay Time
22 ns
Element Configuration
Single
Max Power Dissipation
800 mW
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
21 mΩ
Gate to Source Voltage (Vgs)
12 V
Continuous Drain Current (ID)
6.2 A
Max Junction Temperature (Tj)
150 °C
Drain to Source Voltage (Vdss)
20 V
Drain to Source Breakdown Voltage
20 V
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