DMG1012T7
Quantity available
24 000
Shipping available
ready to ship
Location
AT
Brand
Diodes Inc.
Mpn
DMG1012T7
Description
N-MOSFET; unipolar; 20V; 0.63A; 0.4ohm
Technical specification: DMG1012T7
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
900 µm
Length
1.7 mm
Width
850 µm
Case/Package
SOT-523
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
2.012816 mg
Lifecycle Status
Production (Last Updated: 5 months ago)
Continuous Drain Current (ID)
630 mA
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
400 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Fall Time
12.3 ns
Gate to Source Voltage (Vgs)
6 V
Input Capacitance
60.67 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
280 mW
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
280 mW
Rds On Max
400 mΩ
Resistance
400 MΩ
Rise Time
7.4 ns
Threshold Voltage
1 V
Turn-Off Delay Time
26.7 ns
Turn-On Delay Time
5.1 ns
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