BSS138-7-F
Quantity available
16 191
Shipping available
ready to ship
Location
AT
Brand
Diodes Inc.
Mpn
BSS138-7-F
Description
N-CHANNEL ENHANCEMENT MODE MOSFET
Technical specification: BSS138-7-F
REACH SVHC
Yes
RoHS
Compliant
China RoHS
Compliant
Lead Free
Lead Free
Width
1.3 mm
Height
1.15 mm
Length
2.9 mm
Weight
7.994566 mg
Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Lifecycle Status
Production (Last Updated: 1 month ago)
Rds On Max
3.5 Ω
Resistance
3.5 Ω
Rise Time
10 ns
Threshold Voltage
1.2 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
20 ns
Voltage
50 V
Voltage Rating (DC)
50 V
Continuous Drain Current (ID)
200 mA
Current
2 A
Current Rating
200 mA
Drain to Source Breakdown Voltage
50 V
Drain to Source Resistance
3.5 Ω
Drain to Source Voltage (Vdss)
50 V
Element Configuration
Single
Fall Time
25 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
50 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Breakdown Voltage
50 V
Min Operating Temperature
-55 °C
Nominal Vgs
1.2 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
300 mW
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